Papers:
The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision
Gritsch M., Kosina H., Grasser T., Selberherr S., Linton T., Singh S., Yu S., Giles M.D., TU Vienna, AT
An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is [...]
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]
2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model
The density gradient method is able to reproduce the quantum-mechanical charge density in CMOS devices. Its ability to describe gate tunneling currents is still a matter of dispute. This paper presents the first 2-dimensional application [...]
The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices
We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth [...]
Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling
Simulation of gate oxide tunneling currents in subquartermicron devices requires correct modeling of the electron energy distribution function in the channel region. However, the common assumption of a heated Maxwellian distribution function leads to a [...]
Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors
Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between [...]
Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination
We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]
An Impact Ionization Model Including an Explicit Cold Carrier Population
Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic [...]
The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs
An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]
Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs
Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]
Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing
In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]
An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content
Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]
A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI
In this paper, a new Schottky rectifier structure, called Lateral Trench Sidewall Schottky (LTSS) rectifier on SOI is presented. Based on two-dimensional simulations, we demonstrate that the proposed device is superior in performance as compared [...]
Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling
In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and [...]
Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures
We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]
A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications
The purpose of this work is to present a comprehensive report of the MOS transistor characteristics in a 0.35um technology, both types being surface devices. Results include extensive geometrical and temperature dependencies of the most [...]
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1