Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

, ,
,

Keywords: , , , ,

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior.

PDF of paper:


Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 568 - 571
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1