Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

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We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 568 - 571
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1