Wigger S., Saraniti M., Goodnick S.M., Leitenstorfer A.
Arizona State University, US
Keywords: high-field transport, Monte Carlo simulation, Tera-Hertz radiation
Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femto-second optical excitation of carriers.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 564 - 567
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1