Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

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Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femto-second optical excitation of carriers.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 564 - 567
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1