An Impact Ionization Model Including an Explicit Cold Carrier Population

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Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of MOS transistors. The parameters are determined by three even moments obtained from a solution of a six moments transport model. Together with a nonparabolic description of the density of states accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 572 - 575
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1