An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content


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Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier mobilities and saturation velocities have been found in III-V compound materials, for instance GaAs, AlGaAs, and InP. The project undertaken has utilized a novel methodology to achieve enhanced circuit designs using a multiple statistical simulation approach. This methodology has been described in detail elsewhere [1]. The goal of this project is to extend this methodology to characterize SiGe HBTs and elucidate their dependence on germanium content.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 588 - 591
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1