In this paper, a new Schottky rectifier structure, called Lateral Trench Sidewall Schottky (LTSS) rectifier on SOI is presented. Based on two-dimensional simulations, we demonstrate that the proposed device is superior in performance as compared to the lateral conventional Schottky (LCS) rectifier. The LTSS structure provides upto 1.9 times higher breakdown voltage with low reverse leakage current as compared to the LCS rectifier. Unlike in the case of the LCS rectifier, the reverse breakdown of the proposed Schottky rectifier is very sharp similar to that of a PiN diode. Moreover, a 60 V LTSS rectifier is demonstrated to have the forward voltage drop as low as 0.28 V at 100 A/cm2. Further, at high temperatures, the LTSS rectifier is shown to dissipate significantly lower power as compared to the LCS rectifier. The reasons for the improved performance of the proposed device are analyzed and the effect of metal field-plate on the forward characteristics is studied.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 592 - 595
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems