Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling

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In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and effects of the non-parabolicity of the Si band structure will significantly influence the two-dimensional electronic states. We studied effects of the non-parabolicity on the electronic states in SOI MOS-FETs with such an ultra-thin Si-layer by using an empirical pseudo-potential method and analyzed the electron transport properties by performing single-electron Monte Carlo simulations.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 596 - 599
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1