Semiconductor Device Modeling


A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

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The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]

Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0