Optimization of FIBMOSs through 2-D Device Simulations

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Channel engineering can enhance the performance of MOSFETs. Focused ion beam (FIB) implant technology is one approach for such channel engineering. We have investigated FIB and present a sophisticated optimization technique for FIB MOSFETs (FIBMOS) using 2-D device simulations and 3-D threshold voltage (VT) contour mapping. In the course of this study, we have discovered that FIBMOSs exhibit higher drain current than normal MOSFETs. We studied both single-step and two-step implanted devices (TSFIBMOS). TSFIBMOS has higher drain current and better performance at low supply voltages. The advantages of FIBMOSs and TSFIBMOSs are presented by benchmarking against normal MOSFETs in the core device performance area.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 356 - 359
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0