Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model

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This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley’s impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are described as well as the optimization procedure for calculating the minimum noise figure from Y-parameters and noise voltage spectra. In addition to the minimum noise figure, DC and AC properties are simulated and compared to measurements in order to verify the new approach. Finally the spatial origin of noise is determined by simulation.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 364 - 367
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0