Electronics & Photonics

Adhesion of moulding compounds. Can material pre-selection increase the reliability of electronic components?

Pufall R., Michel B., Kaulfersch E., Infineon Technology AG, DE

It is well known that high temperature storage can degrade moulding compounds for chip encapsulation to such an extent that the adhesions to surfaces like copper (lead frames) or polyimide (chip coating) decreases drastically causing [...]

Application of YAG Laser Micro-Welding in MEMS Packaging

Bozorgi P., university of california, santa barbara, US

This paper reports a new packaging method for a wide range of MEMS for application on both the wafer and device scale. We show a complete set of experimental and modeling results for the application [...]

Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

Forbes L., Louie M.Y., Oregon State University, US

When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared [...]

Control of Conducting Path in Resistive Memory Utilizing Ferritin Protein with Metal Nano Dot

Uenuma M., Zheng B., Kawano K., Horita M., Yoshii S., Yamashita I., Uraoka Y., Nara Institute of Science and Technology, JP

Bio-nano-process (BNP) has been proposed as promising bottom-up process. Recently, there is large interest in application of BNP to memory devices such as resistive random access memory (ReRAM). According to the proposed resistive switching mechanisms, [...]

3-state Quantum Dot Gate FETs in Designing High Sampling Rate ADCs

Karmakar S., Chandy J.A., Jain F.C., University of Connecticut, US

In this work we present Cadence simulation of 3-bit Analog-to-Digital Converters (ADCs) based on compact 3-QDFET comparators, using 32nm design rules with BSIM 3.2.0 and BSIM 3.2.4 models [3]. In addition, we present the precise [...]

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]

Neighbouring Levels Statistic and Shape of Quantum Dots: Si/Sio2

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We model the Si quantum dots (QDs) embedded into the SiO2 substrate. Single sub-band effective mass approach is used to calculate energy levels of electrons and heavy holes. For weak confinement regime (QD size D [...]

Enhancement of Defect Tolerance in the QCA-based Programmable Logic Array (PLA)

Notsu T., Miura K., Nakamae K., Osaka University, JP

In this study we analyze the precedent AND/OR plane cell of a programmable logic array (PLA) based on the quantum-dot cellular automata (QCA), then propose a modified layout that has better defect tolerance. We analyzed [...]

Critical currents in graphene ribbon Josephson junctions

Gabrielli P.G., ENEA, IT

Most of the remarkable transport properties of graphene have to do with its particular band structure at low energies: the undoped system has a finite number of Fermi points, placed at the corner of the [...]

Atomistic Simulations of Electronic Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots

Yalavarthi K., Gaddipati V., Ahmed S., Southern Illinois University at Carbondale, US

In this work, within a fully atomistic framework, we investigate the electronic structure of wurtzite InN quantum dots self-assembled on GaN substrates. The main objectives are two-fold: (1) to explore the origin, nature and the [...]

Jet-printed Si nanowires for flexible backplane applications

Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A., Palo Alto Research Center, US

The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals [...]

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

Stable Light Emiting Electrochemical Cells Based in Supramolecular Interactions

Costa R.D., Lenes M., Ortí E., Bolink H.J., Graber S., Constable E.C., University of Valencia, ES

We will present a breakthrough in the stability of the simplest type of molecular electroluminescent devices, light-emitting electrochemical cells (LEECs). The main drawback of these molecular devices limiting their practical use is their short lifetimes [...]

Optical properties of silicon nanoparticles: Influence of etching, surface oxidation and surface functionalization

Gupta A., Kluge S., Schulz C., Wiggers H., Universität Duisburg-Essen, DE

In this study, we investigated the properties of Si-NPs after surface etching, surface re-oxidation and surface functionalization processes. Surface etching of as-synthesized Si-NPs with hydrofluoric acid causes a blue shift compared to their initial emission [...]

Growth and investigations on Fe/MgO/Fe magnetic tunnel junctions fabricated by dual ion beam sputtering technique

Singh B., Gupta P., Chaudhary S., Pandya D.K., Kashyap S.C., Inidan Institute of Technology Delhi, IN

The experimental observation of Tunnel Magnetoresistance (TMR) in 1996 by Moodera’s group of MIT has triggered intensive efforts worldwide to fabricate and investigate the magnetoresistive junctions showing a TMR effect. While in past 3-4 years, [...]

The Effects of Gamma rays on p-channel MOSFET

Iqbal M.A., Firdous U., Punjab University, PK

The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as Threshold voltage, trans-conductance and [...]

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

Lee K-F, Han M-H, Lo I-S, Yiu C-Y, Li Y., National Chiao Tung University, TW

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure [...]

Effect of temperature and γ rays radiation on the electrical and optical characteristics of Quantum well structure based laser diode

Iqbal M.A., Ghani S., Punjab University, PK

Analysis of effect of temperature in the range (280k-300k) and radiation (X-rays and γ rays) on the AlGaInP based laser at 665nm emission wavelength has been carried out. Before and after irradiation, current-voltage (I-V), light-current [...]

Semiconductor nanoparticles in Photocatalysis: The Emerging Art and Perspectives

Sharma A., Sharma R., Sharma A., Sharma R., Sharma A., Sharma R., AKG College of Engineering, UPTU, IN

A principle of semiconductor nanophotocatalysis – a new trend in photochemistry deals with the photocatalytic redox-reactions with the participation of semiconductor nanoparticles. The origin of various size-dependent explanations in the semiconductor photocatalysis are spot light [...]

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