We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic and optical phonons. We find that self-heating effects in the nanowire transistor lead to more than 10.35 % degradation in the ON-current for VG=VD=1 V.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 45 - 48
Industry sector: Sensors, MEMS, Electronics