Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

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The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure design optimization for Si TFETs. We are currently extending this study to include more designing and material parameters for high-performance TFET devices in low power ICs.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 65 - 68
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4398-3402-2