The Effects of Gamma rays on P-channel MOSFET

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The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as threshold voltage, trans-conductance and output conductance respectively. These parameters are measured and carefully analyzed after irradiation. It has been observed that this radiation degrades the device performance by changing the parameters due to oxide trapped charges and interface. When the gamma radiation falls on the device it deposits energy by causing ionization in the oxide layer. The ionization changes the charge excitation, charge transport and decomposition properties of the materials. It has been found the threshold voltage increased linearly with increasing dose rate in almost devices.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 87 - 90
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics
ISBN: 978-1-4398-3402-2