Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

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When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared photons. This results in multiple internal reflections and light trapping. This paper describes a simple analysis technique and design considerations in the use of backside texturing to improve the near infrared(IR) response of silicon photodiodes, photodetectors, solar cells and imagers. A large enhancement in the near infrared responsivity of silicon photodetectors can be achieved.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 9 - 12
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4398-3402-2