Papers – Page 18 – TechConnect Briefs

A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI

Singh Y., Kumar M.J., Indian Institute of Technology, IN

In this paper, a new Schottky rectifier structure, called Lateral Trench Sidewall Schottky (LTSS) rectifier on SOI is presented. Based on two-dimensional simulations, we demonstrate that the proposed device is superior in performance as compared [...]

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Mitani Y., Wakabayashi A., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

McMahon W., Matsuda K., Lee J., Hess K., Lyding J., University of Illinois, US

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]

An Impact Ionization Model Including an Explicit Cold Carrier Population

Grasser T., Kosina H., Heitzinger C., Selberherr S., TU Vienna, AT

Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic [...]

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Felsl H.P., Wachutka G., Münich University of Technology, DE

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Wigger S., Saraniti M., Goodnick S.M., Leitenstorfer A., Arizona State University, US

Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between [...]

Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling

Gehring A., Grasser T., Selberherr S., TU Vienna, AT

Simulation of gate oxide tunneling currents in subquartermicron devices requires correct modeling of the electron energy distribution function in the channel region. However, the common assumption of a heated Maxwellian distribution function leads to a [...]

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Vasileska D., Knezevic I., Akis R., Ferry D.K., Arizona State University, US

We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth [...]