Papers – Page 19 – TechConnect Briefs

2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model

Schenk A., Wettstein A., Swiss Fed. Inst. of Technology, CH

The density gradient method is able to reproduce the quantum-mechanical charge density in CMOS devices. Its ability to describe gate tunneling currents is still a matter of dispute. This paper presents the first 2-dimensional application [...]

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Neinhus B., Jungemann C., Meinerzhagen B., Universitat Bremen, DE

An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Gritsch M., Kosina H., Grasser T., Selberherr S., Linton T., Singh S., Yu S., Giles M.D., TU Vienna, AT

An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]

A Systematic Search for New Scintillators using Electronic Structure Calculations

Klintenberg M., Derenzo S.E, Weber M.J., Lawrence Berkeley National Laboratory, US

A systematic study of several hundred inorganic crystal structures have been performed by means of electronic structure calculations with the goal of finding potential new scintillator materials for synthesis and testing. All X-ray or neutron [...]

Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

Xie W., Guangzhou University, CN

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body [...]

Gain in a Semiconductor Waveguide Qubit

Harris J., Akis R., Ferry D.K., Arizona State University, US

Recently, it has been suggested that it may be possible to use combinations of coupled quantum wire waveguides to form quantum computational qubits [1],[2]. However, there are several related problems intrinsic to this approach. First, [...]

Computing Excitons in V-shaped Quantum Wires Including Band-Structure and Dielectric Effects : Binding energies and polarization anisotropy of the bright A1, B1, A2 excitons

Dupertuis M.A., Oberli D.Y., Kapon E., Swiss Federal Institute of Technology-EPFL, CH

We demonstrate an efficient numerical scheme for the computation of the excitonic optical response of actual GaAs/AlGaAs quantum wire structures including a large set of relevant effects; structural, valence band-mixing, dielectric and many-body effects can [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]