A New Continuous Model for Deep Submicron MOSFETs

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A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical function G constructed by fitting our equations to measured data. The model is scalable, and only one round of fitting to measured data is needed for each process technology. The resulting drain current is continuous over the entire operating range of the transistor.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 345 - 347
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics
ISBN: 0-9666135-7-0