Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices

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In this work we show quantified modeling results for the effect of gate-voltage-induced mobility degradation on MOS device current. Presented results are for three technologies, i.e. 0.50 mm, 0.35mm, and 0.25mm, and are based on extractions from measured data. Quantified results show that the calculated current loss due to this type of mobility degradation is increased with technology scaling and is reduced at higher temperatures. Measured values of the access resistance of the MOS devices for the three technologies as a function of temperature are also presented.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 348 - 351
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics
ISBN: 0-9666135-7-0