We present a novel methodology for the direct extraction of equivalent circuit models from device simulation. The circuit topology is physically based, i.e., each voltage node corresponds to a quasi-Fermi level or to an electrostatic potential. Circuit equations and branch-constitutive equaitons are derived from the Poisson and continuity equations. Although only d.c. simulation results are employed, the model achieves a.c. predictive power by including charge-storage elements as capacitors. The technique has been impletmented for one-dimensional devices. Examples are shown for pn junctions including high frequency and high injections regiems. An example of optical response of a photo-transistor is presented, demonstrating the applicability of the method to optoelectonic and three-terminal devices.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 337 - 340
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling, Nanoelectronics