Nanoelectronics – Page 83 – TechConnect Briefs

High Performance Magnetic Field Smart Sensor Arrays with Source Separation

Paraschiv-Ionescu A., Jutten C., Ionescu A.M., Paraschiv-Ionescu A., Chovet A., Rusu A., LIS, FR

A new approach to design high performance microsystems is proposed. It is based on the association between a low-cost sensor array and a multidimensional signal processing technique: the so-called 'blind source separation'. In order to [...]

Analytical Study of Vertical Hall (VH)-Devices Using an Adapted Conform Mapping Technique

Besse P.A., Schott C., Popovic R.S., EPFL, CH

We adapt the conforrn mapping technique to the analytical calculation of two dimensional vertical Hall (VH)-devices with five electrical contacts. With our new method the finite size of the two output current electrodes is taken [...]

Semianalytic Modelling of a Magnetic Levitated Disk with Nonuniform Polarization

Michael S., Scheinert G., Uhlman H., Technical University of Ilmenau, DE

A magnetic bearing for a high rotating electromagnetic drived disk with regard to future applications like the Laser-TV is modelled and designed. For modelling of the system consisting of permanent magnets and copper coils a [...]

Sensitivity Calculation Model Using the Finite-Difference Method

Mueller C., Scheinert G., Uhlmann H., Technical University of Ilmenau, DE

The paper describes an approach to general-purpose design sensitivity analysis for electromagnetic devices. Micro system technology often requires the assessment of manufacturing techniques or effects of tolerances. Emphasis is therefore put on the adaptability to [...]

2D Nonlinearity Simulation of the Vertical Hall Sensor Using SESES

Schott C., Randjelovic Z., Waser J-M, Popovic R.S., EPFL, CH

Buried silicon vertical Hall devices have been accurately simulated in 2D under the condition of a varying magnetic field up to 2 Tesla using the numerical FEM device simulator SESESTM. A field dependent Hall scattering [...]

Applications: Hall Effect, Storage

Breakdown in the Output Characteristics of Deep Submicron, a-Si:H TFTs

Colalongo L., Valdinoci M., Forunato G., Mariucci L., Rudan M., University of Bologna, IT

Purpose of this work is to investigate the breakdown in the output characteristics of short-channel (0.2-1.o ,um) amorphous silicon (a-Si:H) thin-film transistors (TFTs). Such effect which, in the case of a-Si:H devices, has been detected [...]

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

Loiko K.V., Peidous I.V., Ho H-M, Lim D.H., Chartered Semiconductor Manufacturing Ltd., SG

The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process [...]

Cellular Automata Studies of Vertical MOSFETs

Saraniti M., Wigger S., Zandler G., Formicone G., Goodnick S.M., Arizona State University, US

This paper presents an overview of the cellular automata (CA) method for semiconductor device simulation. The main advantages of the CA method over the Monte Carlo (MC) approach are presented, and limitations of its modeling [...]

A Physics-Based Characterized Model for an Ultrafast Planar Rectifier

Hossain Z., Fragale W., Simpson W., Dashney G., Motorola, Inc., US

This paper presents a characterized nodel for an ultrafast-recovery (UFR) rectifier based on the manufacturing processes and device structural geometry. The accuray of the developed model depends upon the proper selection of physical models and [...]