Ionescu A.M. – TechConnect Briefs

Wafer-scale integration of in-situ grown carbon nanotube membranes: a platform to study electrical properties

Delaunay M., Dijon J., Fayolle M., Fournier A., Guerin H., Ionescu A.M., Le Poche H., Ramos R., CEA-Liten, FR

Dense arrays of horizontal carbon nanotubes (CNTs) connected between two metallic electrodes and either supported on a silicon dioxide layer or suspended above a third gate electrode constitute a basic building block to achieve CNT-based [...]

Wafer Level Assembly of Single-Walled Carbon Nanotube (SWCNT) Arrays with Precise Positioning

Acquaviva D., Arun A., Bhandari J., Cao J., Ionescu A.M., Lister K., Ecole Polytechnique Fédérale de Lausanne, CH

A novel wafer level assembly method to fabricate SWCNT arrays with precise positioning of each individual SWCNT by ac-dielectrophoresis (DEP) is presented. Unlike the previous CNT assembly performed directly between electrode pairs, in this work, [...]

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

Bardos N., Bopp M., Coronel P., Dainesi P., Ionescu A.M., Jouannic K., Judong F., Pico F., Pribat C., Ristoiu D., Samson M.P., Skotnicki T., Talbot A., Ecole Polytechnique Fédérale de Lausanne, CH

Annealing silicon at high temperatures in hydrogen ambiance has been reported to induce surface diffusion of silicon; in these conditions, adapted 2D arrays of trenches etched in Bulk Si are transformed into buried cavities creating [...]

Electromechanical Modeling of MEMS Resonators with MOSFET Detection

Abelé N., Ancey P., Boucart K., Casset F., Ionescu A.M., Pott V., Séguéni K., Swiss Federal Institute of Technology of Lausanne, CH

This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most [...]

New Compact Model for Generation Drain Current Transients in Weak and Moderate Inversions of Submicron Floating-Body PD SOI MOSFETs

Ionescu A.M., Munteanu D., Swiss Federal Institute of Technology-EPFL, CH

In this paper, generation-type drain current transients, in advanced (down to 50nm gate-length) floating-body PD SOI MOSFETs are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for [...]

High Performance Magnetic Field Smart Sensor Arrays with Source Separation

Chovet A., Ionescu A.M., Jutten C., Paraschiv-Ionescu A., Rusu A., LIS, FR

A new approach to design high performance microsystems is proposed. It is based on the association between a low-cost sensor array and a multidimensional signal processing technique: the so-called 'blind source separation'. In order to [...]

Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

Chovet A., Ionescu A.M., Mathieu N., LPCS/ENSERG, FR

In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of [...]