Buried silicon vertical Hall devices have been accurately simulated in 2D under the condition of a varying magnetic field up to 2 Tesla using the numerical FEM device simulator SESESTM. A field dependent Hall scattering factor allows for the first time to take effects of the magnetic field on the material properties into account. Comparing simulated values of input resistance and sensitivity for different geometry to measurements from real devices demonstrates the correct implementation of both, geometry-related and material non-linearity effects. This approach offers an efficient way for future design of highly linear devices.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 643 - 648
Industry sector: Sensors, MEMS, Electronics