The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process and device simulations and analytical calculations of the threshold voltage shift.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 443 - 446
Industry sector: Sensors, MEMS, Electronics