Nanoelectronics – Page 47 – TechConnect Briefs

Silicon Nanoparticles contacted by metal nanogaps for FET applications

Wolff K., Hilleringmann U., University of Paderborn, DE

A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of [...]

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]

Fabrication of Light Emitting Diodes Using Nano-Porous Silicon Thin Films

Jamei M., Fallah B., Mohajerzadeh S., Karbassian F., Abdi Y., Koohsorkhi J., Robertson M.D., Yuill S., Acadia University, CA

A novel approach for the fabrication of light-emitting diodes based on nano-porous silicon films is reported. The objective of this work was the creation of an efficient light emitter based on existing silicon technologies in [...]

An Integrate and Fire Spiking Neuron Using Silicon Nano-Wire Technology

Bindal A., Hamedi-Hagh S., San Jose State University, US

This study presents a nanometer-scale Integrate and Fire Spike (IFS) neuron cell using vertically-grown, undoped silicon nano-wire transistors. The design cycle starts with determining individual metal gate work functions for each NMOS and PMOS transistor [...]

Synthesis and Thin-Film Transistor Performance of Fluorene-based Copolymers Containing Thiophene Moieties Having Different Position of Alkyl Side Chain

Kong H.Y., Lim E., Jung Y.K., Park M.-J., Ahn T., Yi M.H., Kang I.-N., Shim H.-K., KAIST, KR

We have synthesized fluorene-based copolymers (PF-HT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PF-TH-TT-HT were respectively [...]

Anchoring and alignment behavior of liquid crystals on poly(vinyl cinnamate) thin films

Lee S-W., Lee T.J., Hahm S.G., Lee S-W., Lee T.J., Ree M., Pohang University of Science and Technology, KR

At present, a rubbing process using a fabric is the only technique adopted in the LC display industry to treat PI film surfaces for the mass-production of flat-panel LC display devices. However, this process has [...]

Nanofabric PLA architecture with Flexible Nanowire-redundancy

Joshi M.V., Al-Assadi W., University of Missouri-Rolla, US

We propose a more robust and design-adaptive nanofabric crossbar PLA architecture and associated test methodology to enance the yield and minimize the time complexity for configuration. It is tested for different sizes and defect rate [...]

The Effect of Nanoparticle Distribution on The Structure and Properties of Palladium/Polycarbonate Nanocomposites

Atre S.V., Valmikanathan O.P., Pillai V.K., Mulla I.S., Ostroverkhova O., Oregon Nanoscience & Microtechnologies Institute, US

We report the synthesis of palladium (Pd)/polycarbonate (PC) nanocomposites as well as their morphological, thermal, optical and electrical properties. Pd nanoclusters were produced by the reduction of palladium chloride using a variation of the Brust’s [...]

A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

Velampati R.S., Jain F.C., University of Connecticut, US

This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. [...]

1/f Noise and RTS(Random Telegraph Signals) and Read Errors in Nanoscale Memories

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

The use of charge storage on nanoscale particles has been realized in silicon integrated circuit memories [1,2] and utilized in commercial products[2]. An analysis has previously been made of the increasing portion of the threshold [...]