Nanoelectronics – Page 48 – TechConnect Briefs

Depth resolution capabilities using optical standing waves near surfaces

Neumayer F., Bacsa W.S., University Paul Sabatier, FR

The physics of standing waves has been explored for more than 50 years. Standing wave fields can be used to selectively enhance luminescence or enhance the Raman signal. We explore here the optical standing wave [...]

Application of Nano-Technology in Planar Silica Waveguides to Enhance the Performance of AWG’s and Other Standard Devices

Ticknor A., Yan M., Zhao L., Xu H., NeoPhotonics Corp., US

Though generally perceived as unfertile grounds for nano-technology optics, silica-based Planar Lightwave Circuits (PLCs) are benefiting from the tools, metrology and methods being developed for nanometer-resolution technology. We shall review how some of these methods [...]

Extraordinary Transmission through Al/Si Structure Perforated with Random Distribution of Holes

Chang Y-T., Tung I-C, Chen C-Y, Chen C.C., Tsai M-W, Chan C-H, Chang Y-T., Chen C-Y, Chen C.C., Lee S-C, National Taiwan University, TW

Extraordinary transmission through Al/Si structure perforated with random distribution of holes. The (1, 0) Al/Si surface plasmon mode due to hole array with 1st nearest neighbor distance. The transmission peak intensity is found to depend [...]

photonic nano crystal and its impact

Nzulu G.K, Linkoping University, SE

From all the experiments carried above, Photonic crystal, so far has shown to have a very promising future and it is assumed that in the next decades new technologies would be seen. It is estimated [...]

Hybridization of CMOS with CNT-based Complementary Nano Electro-Mechanical Switch for Low-Leakage and Robust Embedded Memory Design

Chakraborty R.S., Narasimhan S., Bhunia S., Case Western Reserve University, US

Embedded static random access memory (SRAM) that constitutes an integral part of nanoelectronic systems, experiences two major challenges with aggressive technology scaling: 1) exponential increase in leakage current [1] and 2) decrease in robustness of [...]

Single Walled Carbon Nanotubes based Three Dimensional Flexible Electronics

Makaram P., Selvarasah S., Chen C., Busnaina A., Dokmeci M.R., Northeastern University, US

Single Walled Carbon Nanotubes (SWNTs) with their superior electrical and mechanical properties are very strong candidates for future electronic applications. CMOS electronics are constantly being scaled down to accommodate more devices. Alternative device geometries are [...]

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

Liang G., Neophytou N., Nikonov D., Lundstrom M., Purdue Unioversity, US

In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model [...]

Topic: Nanoelectronics