Sensors, MEMS, Electronics – Page 251

Using Ultra-long Nanotubes to Make Identical CNT FETs

Yu Z., Rutherglen C., Li S., Burke P.J., University of California Irvine, US

Centimeter scale aligned carbon nanotube arrays are grown from nanoparticle/metal catalyst pads. We find the nanotubes grow both with and “against the wind”. A metal underlayer provides in-situ electrical contact to these long nanotubes with [...]

CNT, Nano and Molecular Electronics

A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications

Shastri S., Wu Y., Cai W.Z., Grivna G., ON Semiconductor, US

In this paper we describe for the first time a distributed model for the trench capacitor, which includes process parameters that may be extracted from the low-frequency measurement of one or two capacitor geometries. The [...]

Large Scale Simulation of the Nano-Scale High-Temperature-Superconductor Device for the Generating of Continuous Terahertz Waves

Iizuka M., Tachiki M., Minami K., Tejima S., Nakamura H., Research Orgnization Science and Technology, JP

Continuous terahertz waves have important applications in scientific and industrial fields such as medicine and information technology. Many methods (the quantum cascade laser and the photomixing method, etc.) are developed as a continuous terahertz wave [...]

A Nano-Transistor with a Cavity

Ravariu C., Ravariu F., Rusu A., Profirescu M., Ravariu C., Ravariu F., Politehnica University of Bucharest, RO

A SOI nanotransistor with a cavity was simulated. The global current is a superposition of a tunnel current through the cavity and an inversion current at the film bottom. The tunnel source-drain current prevails in [...]

Investigation of Metal Diffusion into Polymers via ab initio Simulations

Dai L., Yang S.W., Chen X.T., Tan V.B.C., Wu P., National University of Singapore, SG

Ab initio MD simulations were carried out to characterize the diffusion of Cu and Ta atoms/clusters inside an amorphous polymer. The diffusion coefficients of Cu and Ta atoms and their atomic clusters in linear amorphous [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits

Jung C., Yoon S., Won T., Inha University, KR

In this paper we propose a realizable RLC-in-RLC-out technique to reduce parasitic parameters. The proposed technique is an efficient MOR (Model Order Reduction) method, which makes it possible to control the rise and delay time [...]

Topography Simulation for Structural Analysis Using Cell Advancing Method

Lee J-G, Yoon S., Kwon O., Won T., Inha University, KR

We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the [...]