A SOI nanotransistor with a cavity was simulated. The global current is a superposition of a tunnel current through the cavity and an inversion current at the film bottom. The tunnel source-drain current prevails in sub 1-nm film thickness and provides the ID-VDS characteristics with a minimum. For film thickness comprised between 100-10nm, the ID-VGS curves preserve similar shapes with a MOS/SOI transfer characteristics. For sub1-nm film thickness, the shape of the ID-VGS characteristics with a maximum suggests a SET like conduction. From the electron concentration simulations result a transport of the electrons one-by-one in the transistor body, which proves the SET like behaviour.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 111 - 114
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Advanced Manufacturing, Nanoelectronics