Sensors, MEMS, Electronics – Page 252

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation

Zhao X., Nabet B., Drexel University, US

We simulate the process of energy relaxation in two-dimensional-electron-gas (2DEG) via electron-electron (e-e) scattering by Monte Carlo method. Results indicate a sub-picosecond energy relaxation response time to external perturbation. We suggest that carriers are subjected [...]

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]

Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures

Zorman B., Krishnan S., Vasileska D., Xu J., Van Schilfgaarde M., Arizona State University, US

The continued scaling of semiconductor devices creates numerous challenges which have to be overcome in order to achieve device behavior that satisfies speed and power constraints. Possible alternatives to conventional CMOS devices include strained-Si or [...]

Hole Transport Simulations in p-channel Si MOSFETs

Krishnan S., Vasileska D., Fischetti M.V., Arizona State University, US

We use a Monte Carlo method to investigate hole transport in ultrasmall p-channel MOSFETs with gate lengths of 25 nm. To model band-structure effects like warping, anisotropy and non-parabolicity on carrier transport, our device simulator [...]

SOS Gate Capacitance Modeling

Morris H.C., Cumberbatch E.C., Abebe H., San Jose State University, US

A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Controllable Electron Transport in the Lateral Nanostructure

Pogrebnyak V.A., Akray E., Küçükaltun A.N., Cukurova University, TR

The study of two-dimensional electronic systems evokes considerable interest due to the broad utilization of the systems in nanotechnology. Design of new devices are commonly based on exploiting the different configurations of multiple-quantum-well (MQW) structures. [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

Mismatch Improvement with XMOS Structure

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia Sdn Bhd, MY

MOS transistor has been continuously scaled down to improve the device performance. Smaller MOS transistors have higher transconductance (gm) and low capacitance, so the ratio gm/C is improved by shrinking. Shorter gate length provides higher [...]