A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s formalism. We have also shown that the constant-mobility model and ballistic model are inherently similar and differ only by different carrier velocities at the top of the barrier. The quantum threshold voltage is modeled by solving Poisson’s equation with the quantum charge density. We have shown that the classical treatment underestimates the threshold voltage.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 769 - 772
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling