The gate leakage, floating body effect, and history effect in 32nm HKMG PD-SOI CMOS have been extensively studied and analyzed. Based on the measured data, a comprehensive HKMG PD-SOI gate leakage model has been developed for PD-SOI circuit simulation and design. The simulation results from the model for the bias dependency of total gate leakage and floating-body voltage agreed with the experimental data very well. A good prediction on history effect in 32nm HKMG PD-SOI CMOS has also been achieved by the model.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 761 - 764
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling