Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

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The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation across the device is assumed. Our compact models are compared with the 2-D numerical data from Sentaurus and give excellent results.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 773 - 776
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 978-1-4398-3402-2