Papers – Page 1022 – TechConnect Briefs

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions

Furlan J., Gorup Z., University of Ljubljana, SI

A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics [...]

Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices

Keshavarz A.A., Walters J.L., Sampson R., STMicrolectronics, US

In this work we show quantified modeling results for the effect of gate-voltage-induced mobility degradation on MOS device current. Presented results are for three technologies, i.e. 0.50 mm, 0.35mm, and 0.25mm, and are based on [...]

A New Continuous Model for Deep Submicron MOSFETs

Chan K-M.S., Wong N-C.A., Wong S-C., Chao C-J., Kao D-B., Wong N-C.A., Wong S-C., Yang C.Y., Winbond Electronics Corporation America, US

A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical [...]

Genetic Algorithm Based MOSFET Model Parameter Extraction

Keser M., Joardar K., Motorola SPS, US

The Levenberg-Marquardt (LM) minimization algorithm commonly employed in MOSFET model parameter extraction has several known deficiencies, such as poor convergence characteristics without a good initial guess, low likelihood of convergence to the globally optimal solution, [...]

Automatic Generation of Equivalent Circuits from Device Simulation

Pacelli A., Mastrapasqua M., Alam M.A., Luryi S., Bell Laboratories, Lucent Technologies, US

We present a novel methodology for the direct extraction of equivalent circuit models from device simulation. The circuit topology is physically based, i.e., each voltage node corresponds to a quasi-Fermi level or to an electrostatic [...]

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

Zhou X., Lim K.Y., Nanyang Technological University, SG

This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers [...]

Analytical Results for the Current-Voltage Characteristics of an SOI-MOSFET

Morris H.C., Cumberbatch E., Phillips T., Hinderberger B., Claremont Graduate University, US

Exact formulae for the current-voltage characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward [1,2]. A detailed comparison with test data is presented and [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]

Behavioral Models and Specific Design Tool for New Power Integrated Devices

Bordingnon T., Sanchez J.-L., Austin P., Houdbert V., LAAS/CNRS, FR

The developments of power systems require the use of specific functions offering a higher performance while being more compact and more reliable than existing discrete functions. To facilitate the design of these new functions,based on [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]