Papers – Page 1000 – TechConnect Briefs

A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT

Xiong Y.Z., Ng G.I., Wang H., Tan C.L., Yang H., Nanyang Technological University, SG

A new approach, based on the typical T-model of InP DHBT, has been developed which uses only a simple set of formulas to transform noise parameters between common emitter and common base configurations. The calculated [...]

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Gharabagi R., St. Louis University, US

A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]

Substrate Current Simulations at Elevated Temperatures

Lyumkis E., Mickevicius R., Polsky B., Loechelt G., Zlotnicka A., Thoma R., Integrated Systems Engineering, Inc., US

We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental [...]

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation

Grasser T., Kosina H., Gritsch M., Selberherr S., TU Wien, AT

Due to the ever decreasing device geometries non-local effects gain more and more importance. It is particularly well known that impact ionization is not properly described by neither a local field nor a local energy [...]

3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits

Bharatan S., Welch P., To K.H., Thoma R., Huang M., Motorola, Digital DNA Laboratories, US

In this paper, we present a practical methodolgy for the 3-dimensional simulation of signal isolation structures along with comparison to measurements made on test structures. We also describe the extraction of a scalable compact model [...]

A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

Binder T., Heitzinger C., Selberherr S., Technical University Wien, AT

We compare the two well-known global optimization methods, simulate annealing and genetic optimization, to a local gradient-based optimization techniques. We rate the applicability of each method in terms of the minimal achievable target value for [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Jungemann C., Nguyen C.D., Decker S., Meinerzhagen B., Universitat Bremen, DE

An improved version of the modified local density approximation is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance of state-of-the-art NMOSFETs with very thin oxides for temperatures from [...]