Papers – Page 1001 – TechConnect Briefs

Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors

Castro F., Nabet B., Motorola Laboratories, US

Spectral photocurrent measurements on AlGaAs/GaAs heterodimensional detectors show a peak near the absorption edge of GaAs under low incident power and at high biasing levels. Previous work has attributed similar results to the Franz-Keldysh spectral [...]

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Time Series Modelling of Surface Topography Generated by Ultrasonic Machining Process

Murti V.S.R., Naga Prasada Rao B., Krishna Reddy M., Osmania University, IN

In these studies the surface roughness profiles were modelled and analysed for a better understanding of the mechanism of metal erosion in USM. Different materials were selected for this purpose based on their diverse properties [...]

Bonding Pad Resistance. A Combined Approach

Bouche G., Gonella R., Sabouret E., Technology Modeling STMicroelectronics, FR

Introducing new intermetal materials, with improved electrical properties but lowered mechanical resistance, requires in terms of reliability to design new structures for pads. The test structures under fabrication have been simulated to try and evaluate [...]

A Framework for Mask-Layout Synthesis Implementing a Level Set Method Simulator

Lee C.-Y., Antonsson E.K., California Institute of Technology, US

Recently, evolutionary methods have been developed to automate MEMS mask-layout synthesis [3]{[6]. These design synthesis methods are iterative searches in which each iteration consists of mask-layout modification, determination of etched shape via an arbitrary 3-D [...]

Semiempirical Direct Dynamics Trajectory Study of the Si+ (2P) + H2 -> SiH+ + H Reaction

Chaâbane N., Vach H., Peslherbe G.H., CNRS-Ecole Polytechnique, FR

Silicon chemical vapor deposition (CVD) is widely used in the microelectronic industry for the production of integrated circuits. For the underlying chemical reactions, the dynamical properties of the involved Si-H compounds are of fundamental interest. [...]

Diffusion Induced Stresses in Microstructures of MEMS

Yang F., University of Rochester, US

The diffusion-induced stresses in silicon wafers were studied. The effect of local electric field on dopant diffusion was considered in the diffusion equation. Only one-dimension problem with a constant surface dopant concentration was investigated. The [...]

Layout Verification and Correction of CMOS-MEMS Layouts

Baidya B., He K., Mukherjee T., Carnegie Mellon, US

The advent of CMOS micromachining has introduced new design rules for fabrication of integrated CMOS-MEMS devices. This paper presents a context dependent DRC algorithm to handle the issues related to pre-fabrication verification of such layouts. [...]

Modeling of Deposition Process by Level Set Method

Jung H., Kwon O., Yoon S., Won T., Inha University, KR

In this paper, we report a novel method for effectively reducing the amount of calculation for a deposition rate at a specific level-set node. The proposed algorithm makes it possible to reduce the number of [...]

Physical Modeling of MEMS Cantilever Beams and the Measurement of Stiction Force

Lam T., Darling R.B., University of Washington, US

A finite element model is combined with experimental data to extract the stiction force in MEMS cantilever beams. The model predicts cantilever behaviors both before and after snap-down has occurred. Experimental measurements of cantilevers have [...]