Papers – Page 999 – TechConnect Briefs

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

Noise Modelling of Microwave Bipolar Transistors

Patti F., Miceli V., Spagnolo B., Università di Palermo, IT

In this paper we present a stochastic approach to study the noise modelling of bipolar microwave transistors. Starting from experimental on-wafer measurements of the scattering and noise parameters of these bipolar devices we obtain the [...]

Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up

Sim S-P., Guo P., Kordesch A., Chen W.F., Liu C-M., Yang C.Y., Lee K., Santa Clara University, US

A new phenomenon of floating node assisted CMOS latch-up is experimentally observed and investigated using TCAD simulation. Using test structures having parasitic bipolar transistors and an electrically floating N+ diffusion node located at various distances [...]

Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer

Sia E.K., Fu J.S., Lu C., Tan S.H., Nanyang Technological University, SG

Millimeter-wave application in intelligent vehicle sensor and others has been in great demand recently for it's small size, high data rate and high resolution property. In this paper, we report our design and simulation of [...]

TCAD Modeling using a Neural Network Based Approach

Matei R., Dima G., Profirescu M.D., University Politehnica of Bucharest, RO

This paper presents system level modelling and simulations results of two closed loop, force-feedback control strategies for micromachined tunnelling accelerometers. The first approach is based on the incorporation of the sensing element in a sigma-delta [...]

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET’s) Based on a Physical Model for Drift

Jamasb S., Collins S.D., Smith R.L., Conexant Systems, US

A physical model for drift in pH-sensitive ISFET's is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise [...]

Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs

Horio K., Mitani Y., Wakabayashi A., Shibaura Institute of Technology, JP

We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the [...]

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor

García-Loureiro A.J., Pena T.F., Prat Viñas Ll., Univ. Santiago de Compostela, ES

In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve [...]

Broadband Millimeter Wave Finline Antenna Simulation and Performance

Fu J.S., Ng C.L., Kwang Y., Sia E.K., Lu C., Nanyang Technological University, SG

Analysis on fin line antenna with broadband and tolerable VSWR characteristic was done. Emphasis were placed in the formulation of the taper equations for the transmission fin line and radiation section and verification of good [...]

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Bakeroot B., Moens P., Vermandel M., Doutreloigne J., University of Gent, BE

Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type [...]