Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M.
Hiroshima University, JP
Keywords: compact model, HV, LDMOS, surface potential-based
We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range of bias conditions. The predictability of the developed model is discussed with examples of various device parameter variations. The optimization scheme of the high-voltage MOSFET device structure with the help of the compact HiSIM-HV model is also discussed.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 893 - 896
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1