threshold voltage – Page 3 – TechConnect Briefs

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) [...]

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Codreanu C., Avram M., University of Bucharest, RO

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y., Nanyang Technological University, SG

This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, [...]

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Vasileska D., Ferry D.K., Arizona State University, US

We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the [...]