We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the charge density in the channel. We also present an analytical expression for the total gate capacitance CtOt that uses SC charge description and takes into account the depletion of the poly-silicon gates. Our simulations show that poly-gate depletion has larger influence on CtOt than the QM charge description. On the contrary, VT is significantly affected by both the poly-gate depletion and the QM effects in the channel.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 408 - 413
Industry sector: Sensors, MEMS, Electronics