compact modeling – TechConnect Briefs

Analytical Surface Potential Solution for Low Effective Mass Channel Common Double Gate MOSFET

Chakraborty A.S., Jandhyala S., Mahapatra S., Indian Institute of Science, Bangalore, IN

Obtaining an accurate although computationally efficient analytic solution for surface potential is the key step towards developing compact model for Low Effective Mass channel material Common Double Gate (CDG) MOSFETs [1]. In our previous work [...]

A Neural Network Method to Model Nanoscale FinFET Performance

He J., Peking University Shenzhen SoC Key Lab., CN

This paper presents a neural network method to model nanometer FinFET performance. The principle of this method is firstly introduced and its application in modeling DC and conductance characteristics of nanoscale FinFET transistor is demonstrated [...]

Compact modeling for UTBB-FDSOI technologies: Main challenges and possible solutions

Poiroux T., CEA-LETI, FR

Fully-Depleted Silicon-On-Insulator (FDSOI) technologies featuring Ultra-Thin silicon Body and Buried oxide (UTBB) have now entered into industrial production stage. These technologies present several decisive advantages over other options, such as excellent transistor electrostatic control, very [...]

A Physics Based Approach to Compact Modeling of Noise in Modern Bipolar Transistors

Niu G., Auburn University, US

A physics based approach to compact modeling of bipolar transistor noise is described. Frequency dependent intrinsic base current noise, its correlation to intrinsic collector current noise, avalanche of intrinsic collector current noise entering the collector-base [...]

NQS Modeling of independent DG MOSFET using RTA Approach

Sharan N., Mahapatra S., Indian Institute of Science, IN

We propose a new set of Relaxation Time Approximation (RTA) based Non Quasi Static (NQS) model for independent double gate MOSFETs by taking into account the fact that any gate can be the dominant gate. [...]

Leakage current in HfO2 stacks: from physical to compact modeling

Larcher L., Padovani A., Pavan P., Università di Modena e Reggio Emilia, IT

First, we present a Monte-Carlo model we developed for describing the charge transport in hafnium-based stacks, which allows reproducing voltage and temperature dependencies of the leakage current along with its statistical distribution. The model accounts [...]

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates

Thakur P.K., Mahapatra S., Indian Institute of Science, Bangalore, IN

This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Khandelwal S., Fjeldly T.A., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Modeling Strategies for Flash Memory Devices

Padovani A., Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

Flash memories are one of the most pervasive components of today electronic systems. The continuous scaling of the memory device opened new issues with regards to sensitivity of the cell threshold voltage to degradation mechanisms [...]

High-Voltage MOSFET Compact Modeling

Seebacher E., austriamicrosystems AG, AT

In many new applications like communication and automotive electronics the usage of integrated high voltage MOS transistors (LDMOS and DMOS) requires highly accurate compact models. At first we discuss the industrial requirements for modern high [...]