This paper presents a neural network method to model nanometer FinFET performance. The principle of this method is firstly introduced and its application in modeling DC and conductance characteristics of nanoscale FinFET transistor is demonstrated in details. It is shown that this method does not need parameter extraction routine while its prediction of the transistor performance has a small relative error within 1% compared with measure data, thus this new method is as accurate as that physics based surface pontential model.
Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2017
Published: May 14, 2017
Pages: 19 - 22
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation