circuit simulation – TechConnect Briefs

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Developing a Common Compact Modeling Platform for Model Developers and Users

Zhang L., Chan M., HKUST, HK

With the recent advance of CMOS technology to the 32nm range, there is a major concern to continue the scaling roadmap. Many new devices have been proposed, but selecting the right structure is not a [...]

A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs

Zhang J., He H., He J., Ye Y., He H., He J., Chan M., Peking University, CN

A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation [...]

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

Abebe H., Cumberbatch E., USC/ISI, US

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US

Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

Ishimura K., Sadachika N., Kusu S., Miura-Mattausch M., Hiroshima University, JP

In this work, the circuit simulation model for DG-MOSFET named HiSIM-DG, has been developed based on the complete surface-potential-based description. The model solves the Poisson equation to the vertical direction iteratively in quasi-2 dimensions including [...]

HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization

Sadachika N., Kusu S., Ishimura K., Murakami T., Kajiwara T., Hayashi T., Nishikawa Y., Yoshida T., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFETs are considered to be suitable for high performance as well as low power applications and its developments are tend to go toward the thinner SOI films to enhance the device characteristics. Thus compact models [...]

HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations

Iino Y., Pesic I., Silvaco Japan, JP

This paper presents HiSIM speed and convergence advantage against BSIM4 and PSP on a large variety of circuits such as memories, MPUs, PLLs, A/D and D/A converters, mixers etc.

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]