Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

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Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method [...]

Surface Potential Based Compact I-V Model for GaN HEMT Devices

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Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]