charge-based model – TechConnect Briefs

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches

Zhou X., Chiah S.B., Chandrasekaran K., See G.H., Shangguan W.Z., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surfacepotential- based approaches. Physical piecewise solutions are regionally derived from Pao–Sah equation, in [...]

Advanced Compact Models for MOSFETs

Watts J., McAndrew C., Enz C., Galup-Montoro C., Gildenblat G., Hu C., van Langevelde R., Miura-Mattausch M., Rios R., Sah C-T, Joint Paper, US

The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for analog and RF application has created the need for advanced compact models for MOSFET circuit design. The first generation of MOSFET models rely [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

The Foundations of the EKV MOS Transistor Charge-Based Model

Enz C., Bucher M., Porret A.S., Sallese J.M., Krummenacher F., Swiss Center for Electronics and Microtechnology, CH

This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes [...]