Porret A.S. – TechConnect Briefs

The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects

Bucher M., Enz C., Krummenacher F., Sallese J.M., Lallement C., Porret A.S., National Technical University of Athens, GR

The EKV 3.0 compact MOS transistor model for advanced IC design is presented. Its basis is an ideal analytical charge-based model including static to non-quasistatic dynamic aspects and noise. The ideal model is extended to [...]

The Foundations of the EKV MOS Transistor Charge-Based Model

Enz C., Bucher M., Porret A.S., Sallese J.M., Krummenacher F., Swiss Center for Electronics and Microtechnology, CH

This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes [...]