Zhu Z. – TechConnect Briefs

Low-Latency Analog Processors for Performance Control of MEMS

Han Y., Zhu Z., Abrol A., Clark J.V., Auburn University, US

Towards faster feedback response for controlling the performance of microelectromechanical systems (MEMS), we present the first use of the mathematical processing properties of bipolar junction transistors (BJT) for such control. This concerns a type of [...]

A turn‐on DC surface‐potential‐based drain current model for fully‐depleted poly‐Si thin film transistors

Zhu Z., Chu J., Suzhou Vocational University, CN

A turn‐on DC surface‐potential‐based drain current model for fully‐depleted polycrystalline silicon thin film transistors is developed based on the charge sheet model considering both deep and tail acceptor trap states in the grain boundary and [...]

Interface Traps in Surface-Potential-Based MOSFET Models

Chen Z., Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Nanyang Technological University, SG

Surface or interface properties along the surface channel region have great influences on the MOSFET characteristics. The interface-trap density increases during the repeated program-erase cycling of non-volatile floating-gate and SONOS memory transistors. Thus, the compact [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

Double-gate MOSFET is one of the key potential devices to allow further extension of CMOS technology scaling. The compact modeling community faces great challenges to model the physical effects due to the coupling of the [...]

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Zhu G., Zhu Z., See G.H., Zhou X., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quantum mechanical effect (QME) in nanoscale MOSFETs has become more and more important. The quantization of the space charge density in bulk-MOS compact models is usually modeled by the van Dort model with a [...]

New Properties and New Challenges in MOS Compact Modeling

Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Srinivas A., Zhang J., Nanyang Technological University, SG

As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing [...]

Scalable MOSFET Short-channel Charge Model in All Regions

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Zhu Z., Lim G.H., Pandey S.M., Cheng M., Chu S., Hsia L.-C., NTU, SG

Short-channel effects (SCEs) for both intrinsic chargesand extrinsic capacitances need to be modeled when theMOSFET channel is short. The intrinsic SCEs are modeled using bulk-charge sharing and quasi-two dimensional potential barrier loweirng; extrinsic overlap capacitances [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]