Li C. – TechConnect Briefs

Improved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect

Zhang A., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Ma G., Pan J., He J., He X., He Y., Hu G., Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

In this paper, a parasitic capacitance model for a finite single three-dimensional (3-D) wire above an infinite plate in the nano-scale 3-D integrated circuit application is developed based on electric field decomposition (EFD). The capacitance [...]

Numerical Method to Simulate GFET Terahertz Wave Detection

Ma X., He J., He X., Li C., He J., He X., Jun P., Hu G., Ren Y., Wang X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab [...]

Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

Chen Y., He J., He X., Li C., Liu J., He J., He X., Jun P., Hu G., Liu J., Ren Y., Ma X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method [...]

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Hot Carrier Effect and Oxide Reliability of T-FinFET Devices

He J., He X., He Y., Hu G., Li C., Liu J., He J., He X., He Y., Liu J., Ma G., He J., He X., He Y., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is [...]

An Effective Mobility Model for Tunneling Double-Gate MOSFET (T-FinFET)

He J., He X., Pan J., Liu J., Li C., Liu J., Hu G., Ma G., He J., He X., Chan M., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper [...]

Nanodelivery of Chinese traditional medicine extract of Gingko Biloba (EGb-761) induces superior neuroprotection following traumatic brain injury in heat stroke

Sharma A., Sharma H.S., Muresanu D.F., Lafuente J.V., Zhang Z-q, Li C., Patnaik R., Tian Z.R., Ozikzilcik A., Sharma A., Sharma H.S., Uppsala University, Uppsala, SE

Military personnel are often exposed to high summer heat resulting in heat stroke (HS) and related illnesses. HS often results in serious mental and physical consequences due to breakdown of the blood-brain barrier (BBB) to [...]

Adsorption of Cl adatom on Na-Decorated graphene

Yuan G., Song X., Li C., Wang J., Mimura H., Ocean University of China, CN

In this presentation, the effects of the Cl adatom on Na-decorated graphene are studied using first principles density functional theory. The adsorption energy, geometric structure, charge density difference, and density of states are calculated under [...]

Nanoprobe for Optical Molecular Imaging

Zheng S., Wang R., Che W., Harrison W.J., Yang Z., Li C., Eastman Kodak Company, US

Optical molecular imaging (OMI) is a very powerful tool for studying the temporal and spatial dynamics of specific biomolecules and their interactions in real time in vivo. It exhibits the great advantages of high temporal [...]

The Monolithic Integration of 6H-SiC Electronics with 6H-SiC MEMS for Harsh Environment Applications

Hailu E., Atwell A.R., Duster J.S., Li C., Balseanu M., Kornegay K.T., Cornell University, US

We report the development of a design and fabrication methodology for the first monolithic integration of silicon carbide (SiC) MEMS sensors with SiC-based electronic amplification and control circuitry. MEMS and circuit integration on silicon has [...]