Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method is described and the GFET analog/RF performance dependence on the operation bias, device parameter, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the GFET structure and improve its circuit performance for the potential analog/RF application in near future.
Journal: TechConnect Briefs
Volume: TechConnect Briefs 2019
Published: June 17, 2019
Pages: 248 - 251
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Sensors - Chemical, Physical & Bio