Iizuka T. – TechConnect Briefs

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

Miura-Mattausch M., Kikuchihara H., Feldmann U., Nakagawa T., Miyake M., Iizuka T., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

The Silicon-On-Thin-Buried-Oxide (SOTB) transistor is a descendant of the conventional SOI MOSFET with thin Silicon and BOX layers. Many different structure and material variations are possible, where the choice of a thicker BOX may be [...]

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the [...]

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M., Hiroshima University, JP

A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Hiroshima University, JP

For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Miura-Mattausch M., Navarro D., Sadachika N., Suzuki G., Takeda Y., Miyake M., Warabino T., Machida K., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kumashiro S., Inagaki R., Miyamoto S., Hiroshima University, JP

The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S., Hiroshima University, JP

Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S., Hiroshima University, JP

Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]