Mobility of Electrons in Rectangular Si Nanowires

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We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 13 - 15
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 0-9767985-8-1